- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 43/35 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
Patent holdings for IPC class H10B 43/35
Total number of patents in this class: 641
10-year publication summary
|
0
|
0
|
0
|
0
|
2
|
8
|
111
|
187
|
190
|
143
|
| 2015 | 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Kioxia Corporation | 9847 |
125 |
| Samsung Electronics Co., Ltd. | 131630 |
117 |
| Yangtze Memory Technologies Co., Ltd. | 1940 |
100 |
| Micron Technology, Inc. | 24960 |
83 |
| SK Hynix Inc. | 11030 |
49 |
| Sandisk Technologies LLC | 5684 |
36 |
| Lodestar Licensing Group LLC | 583 |
30 |
| Applied Materials, Inc. | 16587 |
13 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 36809 |
13 |
| Semiconductor Energy Laboratory Co., Ltd. | 10902 |
7 |
| Macronix International Co., Ltd. | 2562 |
7 |
| IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1115 |
6 |
| Sunrise Memory Corporation | 192 |
4 |
| Intel NDTM US LLC | 373 |
4 |
| Intel Corporation | 45621 |
3 |
| ASM IP Holding B.V. | 1715 |
3 |
| Monolithic 3D Inc. | 270 |
3 |
| Winbond Electronics Corp. | 1173 |
3 |
| Zeno Semiconductor, Inc. | 236 |
3 |
| Renesas Electronics Corporation | 6305 |
2 |
| Other owners | 30 |